Infineon IRS2181SPBF High Side Gate Driver, 2.3 A 8-Pin 600 V, SOIC

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小計（1 包，共 2 件）*

TWD143.00

(不含稅)

TWD150.16

(含稅)

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每單位
每包*
2 - 8TWD71.50TWD143.00
10 - 18TWD64.00TWD128.00
20 - 48TWD62.50TWD125.00
50 - 98TWD60.50TWD121.00
100 +TWD51.50TWD103.00

* 參考價格

包裝方式：
RS庫存編號:
257-5862
製造零件編號:
IRS2181SPBF
製造商:
Infineon
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品牌

Infineon

Product Type

Gate Driver

Output Current

2.3A

Pin Count

8

Package Type

SOIC

Fall Time

20ns

Driver Type

High Side

Rise Time

60ns

Minimum Supply Voltage

10V

Maximum Supply Voltage

600V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Series

IRS

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon high and low side driver are high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V

Floating channel designed for bootstrap operation

Fully operational to +600 V

Tolerant to negative transient voltage, dV/dt immune

Gate drive supply range from 10 V to 20 V

Under voltage lockout for both channels

33 V and 5 V input logic compatible

Matched propagation delay for both channels

Logic and power ground +/- 5 V offset

Lower di/dt gate driver for better noise immunity

Output source/sink current capability 14 A/18 A

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