Infineon IRS2113SPBF High Side Gate Driver, 2.5 A 16-Pin 20 V, SOIC

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TWD238.00

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TWD249.90

(含稅)

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2 - 8TWD119.00TWD238.00
10 - 24TWD107.00TWD214.00
26 - 98TWD101.00TWD202.00
100 - 498TWD88.00TWD176.00
500 +TWD85.50TWD171.00

* 參考價格

包裝方式：
RS庫存編號:
257-5824
製造零件編號:
IRS2113SPBF
製造商:
Infineon
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品牌

Infineon

Product Type

Gate Driver

Output Current

2.5A

Pin Count

16

Package Type

SOIC

Fall Time

17ns

Driver Type

High Side

Rise Time

35ns

Minimum Supply Voltage

10V

Maximum Supply Voltage

20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Series

IRS2110/IRS2113

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon high and low side driver are high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 V or 600 V.

Floating channel designed for bootstrap operation

Fully operational to +500 V or +600 V

Tolerant to negative transient voltage, dV/dt immune

Gate drive supply range from 10 V to 20 V

Under voltage lockout for both channels

33 V logic compatible

Logic and power ground ± 5V offset

CMOS Schmitt-triggered inputs with pull-down

Cycle by cycle edge-triggered shutdown logic

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