Renesas Electronics HIP2100IBZT7A, Half Bridge 2, 2 A 8-Pin 14 V dc, SOIC
- RS庫存編號:
- 256-1548
- 製造零件編號:
- HIP2100IBZT7A
- 製造商:
- Renesas Electronics
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 2 件)*
TWD263.00
(不含稅)
TWD276.16
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 244 個,準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD131.50 | TWD263.00 |
| 10 - 18 | TWD118.50 | TWD237.00 |
| 20 - 98 | TWD116.50 | TWD233.00 |
| 100 - 198 | TWD97.00 | TWD194.00 |
| 200 + | TWD95.50 | TWD191.00 |
* 參考價格
- RS庫存編號:
- 256-1548
- 製造零件編號:
- HIP2100IBZT7A
- 製造商:
- Renesas Electronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Renesas Electronics | |
| Product Type | Gate Driver Module | |
| Output Current | 2A | |
| Pin Count | 8 | |
| Fall Time | 10ns | |
| Package Type | SOIC | |
| Driver Type | Half Bridge | |
| Number of Outputs | 2 | |
| Rise Time | 10ns | |
| Minimum Supply Voltage | 9V | |
| Maximum Supply Voltage | 14V dc | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.75mm | |
| Length | 5mm | |
| Series | HIP2100 | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Mount Type | Board | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Renesas Electronics | ||
Product Type Gate Driver Module | ||
Output Current 2A | ||
Pin Count 8 | ||
Fall Time 10ns | ||
Package Type SOIC | ||
Driver Type Half Bridge | ||
Number of Outputs 2 | ||
Rise Time 10ns | ||
Minimum Supply Voltage 9V | ||
Maximum Supply Voltage 14V dc | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 1.75mm | ||
Length 5mm | ||
Series HIP2100 | ||
Standards/Approvals No | ||
Width 4 mm | ||
Mount Type Board | ||
Automotive Standard No | ||
The Renesas half bridge driver is a high frequency, 100V half bridge N-channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under voltage of the high-side supply.
Drives N-channel MOSFET half bridge
Pb-free (RoHS compliant)
Bootstrap supply max voltage to 114VDC
On-chip 1Ω bootstrap diode
Fast propagation times for multi-MHz circuits
Drives 1000pF load with rise and fall times typ of 10ns
CMOS input thresholds for improved noise immunity
Low Power Consumption
Wide Supply Range
Supply Under voltage Protection
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