Renesas Electronics HIP2101IBZT MOSFET Gate Driver 2, 2 A 8-Pin 14 V, SOIC
- RS庫存編號:
- 238-0035
- 製造零件編號:
- HIP2101IBZT
- 製造商:
- Renesas Electronics
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可享批量折扣
小計（1 包，共 2 件）*
TWD297.00
(不含稅)
TWD311.84
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 4,978 件從 2026年1月26日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | TWD148.50 | TWD297.00 |
| 50 - 98 | TWD143.50 | TWD287.00 |
| 100 - 248 | TWD139.00 | TWD278.00 |
| 250 - 998 | TWD134.00 | TWD268.00 |
| 1000 + | TWD130.00 | TWD260.00 |
* 參考價格
- RS庫存編號:
- 238-0035
- 製造零件編號:
- HIP2101IBZT
- 製造商:
- Renesas Electronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Renesas Electronics | |
| Product Type | MOSFET | |
| Output Current | 2A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 10ns | |
| Driver Type | MOSFET | |
| Number of Outputs | 2 | |
| Rise Time | 500ns | |
| Minimum Supply Voltage | 9V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 14V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.75mm | |
| Series | HIP2101 | |
| Length | 5mm | |
| Width | 4 mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Renesas Electronics | ||
Product Type MOSFET | ||
Output Current 2A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 10ns | ||
Driver Type MOSFET | ||
Number of Outputs 2 | ||
Rise Time 500ns | ||
Minimum Supply Voltage 9V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 14V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.75mm | ||
Series HIP2101 | ||
Length 5mm | ||
Width 4 mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Renesas Electronics HIP2101 is a high frequency, 100V half bridge N-channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. Unlike some competitors, the high-side output returns to its correct state after a momentary under voltage of the high-side supply.
Drives N-Channel MOSFET half bridge
SOIC, EPSOIC, QFN and DFN package options
Bootstrap supply max voltage to 114VDC
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