ROHM BD2320EFJ-LAE2 MOSFET Gate Driver, 4.5 A 32 V, HTSOP-J8

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 包,共 2 件)*

TWD169.00

(不含稅)

TWD177.44

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 加上 32 件從 2026年5月18日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位
每單位
每包*
2 - 48TWD84.50TWD169.00
50 - 98TWD80.00TWD160.00
100 - 248TWD75.50TWD151.00
250 - 998TWD70.00TWD140.00
1000 +TWD65.00TWD130.00

* 參考價格

包裝方式:
RS庫存編號:
255-7660
製造零件編號:
BD2320EFJ-LAE2
製造商:
ROHM
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

ROHM

Product Type

MOSFET

Output Current

4.5A

Fall Time

6ns

Package Type

HTSOP-J8

Driver Type

MOSFET

Minimum Supply Voltage

32V

Maximum Supply Voltage

32V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Series

BD2320E

Standards/Approvals

No

Mount Type

PCB

Automotive Standard

No

The ROHM High frequency high-side and low-side driver is 100 V maximum voltage high-side and low-side gate drivers which can drive external Nch-FET using the bootstrap method. The driver includes a 100 V bootstrap diode and independent inputs control for high-side and low-side. 3.3 V and 5.0 V are available for interface voltage. Under voltage lockout circuits are built in for high-side and low-side.

Long time support product for industrial applications

Under Voltage Lockout (UVLO) for high-side and low-side driver

3.3 V and 5.0 V interface voltage

Output In-phase with input signal

相關連結