製造零件編號

ROHM BD2320EFJ-LAE2 MOSFET Gate Driver, 4.5 A 32 V, HTSOP-J8

RS庫存編號:: 255-7660
製造零件編號:: BD2320EFJ-LAE2
製造商:: ROHM

ROHM BD2320EFJ-LAE2 MOSFET Gate Driver, 4.5 A 32 V, HTSOP-J8

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可享批量折扣

小計（1 包，共 2 件）*

TWD164.00

(不含稅)

TWD172.20

訂單超過 $1,300.00 免費送貨

有庫存

82 件準備從其他地點送貨

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單位	每單位	每包*
2 - 48	TWD82.00	TWD164.00
50 - 98	TWD77.50	TWD155.00
100 - 248	TWD73.50	TWD147.00
250 - 998	TWD68.00	TWD136.00
1000 +	TWD63.00	TWD126.00

* 參考價格

RS庫存編號:: 255-7660
製造零件編號:: BD2320EFJ-LAE2
製造商:: ROHM

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	ROHM
	Product Type	MOSFET
	Output Current	4.5A
	Package Type	HTSOP-J8
	Fall Time	6ns
	Driver Type	MOSFET
	Minimum Supply Voltage	32V
	Maximum Supply Voltage	32V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	125°C
	Series	BD2320E
	Standards/Approvals	No
	Mount Type	PCB
	Automotive Standard	No

	選取全部
	品牌 ROHM
	Product Type MOSFET
	Output Current 4.5A
	Package Type HTSOP-J8
	Fall Time 6ns
	Driver Type MOSFET
	Minimum Supply Voltage 32V
	Maximum Supply Voltage 32V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 125°C
	Series BD2320E
	Standards/Approvals No
	Mount Type PCB
	Automotive Standard No

Datasheet - BD2320EFJ-LAE2

The ROHM High frequency high-side and low-side driver is 100 V maximum voltage high-side and low-side gate drivers which can drive external Nch-FET using the bootstrap method. The driver includes a 100 V bootstrap diode and independent inputs control for high-side and low-side. 3.3 V and 5.0 V are available for interface voltage. Under voltage lockout circuits are built in for high-side and low-side.

Long time support product for industrial applications

Under Voltage Lockout (UVLO) for high-side and low-side driver

3.3 V and 5.0 V interface voltage

Output In-phase with input signal

ROHM BD2320EFJ-LAE2 MOSFET Gate Driver, 4.5 A 32 V, HTSOP-J8

訂單超過 $1,300.00 免費送貨

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