onsemi MOSFET Gate Driver, 6.5 A 16-Pin 5 V, SOIC
- RS庫存編號:
- 244-9155
- 製造零件編號:
- NCP51561BBDWR2G
- 製造商:
- onsemi
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 1000 件)*
TWD68,100.00
(不含稅)
TWD71,500.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月12日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD68.10 | TWD68,100.00 |
| 2000 + | TWD66.80 | TWD66,800.00 |
* 參考價格
- RS庫存編號:
- 244-9155
- 製造零件編號:
- NCP51561BBDWR2G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Output Current | 6.5A | |
| Pin Count | 16 | |
| Fall Time | 16ns | |
| Package Type | SOIC | |
| Driver Type | MOSFET | |
| Rise Time | 19ns | |
| Minimum Supply Voltage | 5V | |
| Maximum Supply Voltage | 5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | NCP51 | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Output Current 6.5A | ||
Pin Count 16 | ||
Fall Time 16ns | ||
Package Type SOIC | ||
Driver Type MOSFET | ||
Rise Time 19ns | ||
Minimum Supply Voltage 5V | ||
Maximum Supply Voltage 5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series NCP51 | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor Isolated High Current IGBT/MOSFET Gate Driver is high−current single channel. IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation,designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A/D/F), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C/E) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3V to 20V and they are available in wide−body SOIC−8 package.
High Peak Output Current (+6.5 A/−6.5 A)
Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F)
Short Propagation Delays with Accurate Matching
IGBT/MOSFET Gate Clamping during Short Circuit
IGBT/MOSFET Gate Active Pull Down
Tight UVLO Thresholds for Bias Flexibility
Wide Bias Voltage Range including Negative VEE2 (Version B)
3.3 V, 5 V, and 15 V Logic Input
5 kVrms Galvanic Isolation
High Transient Immunity
High Electromagnetic Immunity
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