onsemi MOSFET Gate Driver, 6.5 A 16-Pin 5 V, SOIC

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 卷,共 1000 件)*

TWD68,100.00

(不含稅)

TWD71,500.00

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 2026年7月15日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
1000 - 1000TWD68.10TWD68,100.00
2000 +TWD66.80TWD66,800.00

* 參考價格

RS庫存編號:
244-9157
製造零件編號:
NCP51561DADWR2G
製造商:
onsemi
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

onsemi

Product Type

MOSFET

Output Current

6.5A

Pin Count

16

Package Type

SOIC

Fall Time

16ns

Driver Type

MOSFET

Rise Time

19ns

Minimum Supply Voltage

5V

Maximum Supply Voltage

5V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Series

NCP51

Automotive Standard

No

The ON Semiconductor Isolated High Current IGBT/MOSFET Gate Driver is high−current single channel. IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation,designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A/D/F), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C/E) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3V to 20V and they are available in wide−body SOIC−8 package.

High Peak Output Current (+6.5 A/−6.5 A)

Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F)

Short Propagation Delays with Accurate Matching

IGBT/MOSFET Gate Clamping during Short Circuit

IGBT/MOSFET Gate Active Pull Down

Tight UVLO Thresholds for Bias Flexibility

Wide Bias Voltage Range including Negative VEE2 (Version B)

3.3 V, 5 V, and 15 V Logic Input

5 kVrms Galvanic Isolation

High Transient Immunity

High Electromagnetic Immunity

相關連結