Infineon 2ED2103S06FXUMA1 Gate Driver 2, 290 mA 8-Pin 20 V, DSO
- RS庫存編號:
- 236-3633
- 製造零件編號:
- 2ED2103S06FXUMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD229.00
(不含稅)
TWD240.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 850 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD22.90 | TWD229.00 |
| 20 - 90 | TWD22.30 | TWD223.00 |
| 100 - 240 | TWD21.90 | TWD219.00 |
| 250 - 490 | TWD21.20 | TWD212.00 |
| 500 + | TWD20.80 | TWD208.00 |
* 參考價格
- RS庫存編號:
- 236-3633
- 製造零件編號:
- 2ED2103S06FXUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | General Purpose Driver | |
| Output Current | 290mA | |
| Pin Count | 8 | |
| Fall Time | 35ns | |
| Package Type | DSO | |
| Number of Outputs | 2 | |
| Driver Type | General Purpose | |
| Rise Time | 170ns | |
| Minimum Supply Voltage | 10V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS | |
| Series | 2ED | |
| Mount Type | Board | |
| Automotive Standard | AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type General Purpose Driver | ||
Output Current 290mA | ||
Pin Count 8 | ||
Fall Time 35ns | ||
Package Type DSO | ||
Number of Outputs 2 | ||
Driver Type General Purpose | ||
Rise Time 170ns | ||
Minimum Supply Voltage 10V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS | ||
Series 2ED | ||
Mount Type Board | ||
Automotive Standard AEC-Q100 | ||
The Infineon high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It provides excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages. With no parasitic Thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Integrated ultra-fast, low resistance bootstrap diode
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
50% lower level-shift losses
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