Infineon 256 kB Serial-SPI Serial (SPI) F-RAM 8-Pin, FM25V02A-G
- RS庫存編號:
- 273-7389
- 製造零件編號:
- FM25V02A-G
- 製造商:
- Infineon
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小計(1 件)*
TWD195.00
(不含稅)
TWD204.75
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 909 件從 2025年12月29日 起發貨
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* 參考價格
- RS庫存編號:
- 273-7389
- 製造零件編號:
- FM25V02A-G
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 256kB | |
| Product Type | Serial (SPI) F-RAM | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 40MHz | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Minimum Supply Voltage | 2V | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Number of Words | 32k | |
| Number of Bits per Word | 8 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 256kB | ||
Product Type Serial (SPI) F-RAM | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 40MHz | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Minimum Supply Voltage 2V | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Number of Words 32k | ||
Number of Bits per Word 8 | ||
Automotive Standard No | ||
The Infineon FRAM is a 256 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
相關連結
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