Infineon 256 kB Serial-SPI Serial (SPI) F-RAM 8-Pin, FM25V02A-G
- RS庫存編號:
- 273-7388
- 製造零件編號:
- FM25V02A-G
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 97 件)*
TWD16,829.50
(不含稅)
TWD17,671.46
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 873 件從 2025年12月29日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 97 - 97 | TWD173.50 | TWD16,829.50 |
| 194 + | TWD168.30 | TWD16,325.10 |
* 參考價格
- RS庫存編號:
- 273-7388
- 製造零件編號:
- FM25V02A-G
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 256kB | |
| Product Type | Serial (SPI) F-RAM | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 40MHz | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 2V | |
| Minimum Operating Temperature | -40°C | |
| Number of Words | 32k | |
| Maximum Supply Voltage | 3.6V | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 256kB | ||
Product Type Serial (SPI) F-RAM | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 40MHz | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 2V | ||
Minimum Operating Temperature -40°C | ||
Number of Words 32k | ||
Maximum Supply Voltage 3.6V | ||
Automotive Standard No | ||
The Infineon FRAM is a 256 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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