可享批量折扣
查看批量定價選項小計(2 件, 每袋2個)*
TWD154.00
(不含稅)
TWD161.70
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月22日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD77.00 | TWD154.00 |
| 10 - 18 | TWD75.50 | TWD151.00 |
| 20 - 48 | TWD74.00 | TWD148.00 |
| 50 - 98 | TWD72.00 | TWD144.00 |
| 100 + | TWD70.50 | TWD141.00 |
* 參考價格
- RS庫存編號:
- 273-7387
- 製造零件編號:
- FM25L04B-G
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | FRAM | |
| Memory Size | 4kB | |
| Organisation | 512 x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 20MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | Restriction of hazardous substances (RoHS) | |
| Maximum Operating Temperature | 85°C | |
| Minimum Operating Temperature | -40°C | |
| Minimum Supply Voltage | 2.7V | |
| Number of Bits per Word | 8 | |
| Automotive Standard | No | |
| Maximum Supply Voltage | 3.6V | |
| Number of Words | 512 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type FRAM | ||
Memory Size 4kB | ||
Organisation 512 x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 20MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals Restriction of hazardous substances (RoHS) | ||
Maximum Operating Temperature 85°C | ||
Minimum Operating Temperature -40°C | ||
Minimum Supply Voltage 2.7V | ||
Number of Bits per Word 8 | ||
Automotive Standard No | ||
Maximum Supply Voltage 3.6V | ||
Number of Words 512 | ||
The Infineon FRAM is a 4 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
相關連結
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