Infineon 4 kB SPI FRAM 8-Pin SOIC

RS庫存編號:: 188-5409
製造零件編號:: FM25040B-G
製造商:: Infineon

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 97 件）*

TWD4,888.80

(不含稅)

TWD5,133.24

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年7月06日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
97 - 97	TWD50.40	TWD4,888.80
194 - 291	TWD49.20	TWD4,772.40
388 +	TWD48.30	TWD4,685.10

* 參考價格

RS庫存編號:: 188-5409
製造零件編號:: FM25040B-G
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Memory Size	4kB
	Product Type	FRAM
	Organisation	512 x 8 bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	20ns
	Mount Type	Surface
	Maximum Clock Frequency	20MHz
	Package Type	SOIC
	Pin Count	8
	Length	4.97mm
	Width	3.98 mm
	Height	1.38mm
	Standards/Approvals	No
	Maximum Operating Temperature	85°C
	Automotive Standard	AEC-Q100
	Number of Words	512
	Maximum Supply Voltage	5.5V
	Minimum Supply Voltage	4.5V
	Minimum Operating Temperature	-40°C
	Number of Bits per Word	8

	選取全部
	品牌 Infineon
	Memory Size 4kB
	Product Type FRAM
	Organisation 512 x 8 bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 20ns
	Mount Type Surface
	Maximum Clock Frequency 20MHz
	Package Type SOIC
	Pin Count 8
	Length 4.97mm
	Width 3.98 mm
	Height 1.38mm
	Standards/Approvals No
	Maximum Operating Temperature 85°C
	Automotive Standard AEC-Q100
	Number of Words 512
	Maximum Supply Voltage 5.5V
	Minimum Supply Voltage 4.5V
	Minimum Operating Temperature -40°C
	Number of Bits per Word 8

Datasheet FM25040B-G

COO (Country of Origin):: US

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 4 kB SPI FRAM 8-Pin SOIC

訂單超過 $1,300.00 免費送貨

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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