Infineon 16 kB SPI FRAM 8-Pin SOIC, FM25C160B-GTR
- RS庫存編號:
- 215-5781
- 製造零件編號:
- FM25C160B-GTR
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD288.00
(不含稅)
TWD302.40
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | TWD57.60 | TWD288.00 |
| 625 - 1245 | TWD56.00 | TWD280.00 |
| 1250 + | TWD55.40 | TWD277.00 |
* 參考價格
- RS庫存編號:
- 215-5781
- 製造零件編號:
- FM25C160B-GTR
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 16kB | |
| Product Type | FRAM | |
| Organisation | 2K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 5ns | |
| Maximum Clock Frequency | 20MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | No | |
| Width | 3.98 mm | |
| Length | 4.97mm | |
| Height | 1.38mm | |
| Maximum Operating Temperature | 85°C | |
| Number of Words | 2 | |
| Minimum Supply Voltage | 4.5V | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Number of Bits per Word | 8 | |
| Automotive Standard | AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 16kB | ||
Product Type FRAM | ||
Organisation 2K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 5ns | ||
Maximum Clock Frequency 20MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals No | ||
Width 3.98 mm | ||
Length 4.97mm | ||
Height 1.38mm | ||
Maximum Operating Temperature 85°C | ||
Number of Words 2 | ||
Minimum Supply Voltage 4.5V | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
Number of Bits per Word 8 | ||
Automotive Standard AEC-Q100 | ||
The Cypress Semiconductor FM25C160B is a 16-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non-volatile memories.
16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
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