Infineon 16kbit Serial-SPI FRAM Memory 8-Pin SOIC, FM25C160B-GTR
- RS庫存編號:
- 215-5780
- 製造零件編號:
- FM25C160B-GTR
- 製造商:
- Infineon
可享批量折扣
小計（1 管，共 2500 件）*
TWD109,750.00
(不含稅)
TWD115,250.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月29日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 2500 - 2500 | TWD43.90 | TWD109,750.00 |
| 5000 + | TWD42.60 | TWD106,500.00 |
* 參考價格
- RS庫存編號:
- 215-5780
- 製造零件編號:
- FM25C160B-GTR
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 16kbit | |
| Organisation | 2K x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 5ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Width | 3.98mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Supply Voltage | 4.5 V | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 2 K | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 16kbit | ||
Organisation 2K x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 5ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Width 3.98mm | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8bit | ||
Minimum Operating Supply Voltage 4.5 V | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 2 K | ||
The Cypress Semiconductor FM25C160B is a 16-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non-volatile memories.
16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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