Infineon 4 kB FRAM 8-Pin SOIC, FM24C04B-GTR
- RS庫存編號:
- 215-5779
- 製造零件編號:
- FM24C04B-GTR
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD267.00
(不含稅)
TWD280.35
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4,060 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | TWD53.40 | TWD267.00 |
| 625 - 1245 | TWD52.60 | TWD263.00 |
| 1250 + | TWD48.60 | TWD243.00 |
* 參考價格
- RS庫存編號:
- 215-5779
- 製造零件編號:
- FM24C04B-GTR
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 4kB | |
| Product Type | FRAM | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 10ns | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 1MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Length | 4.97mm | |
| Height | 1.48mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Minimum Supply Voltage | 4.5V | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Automotive Standard | AEC-Q100 | |
| Number of Words | 512 | |
| Maximum Supply Voltage | 5.5V | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 4kB | ||
Product Type FRAM | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 10ns | ||
Mount Type Surface | ||
Maximum Clock Frequency 1MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Length 4.97mm | ||
Height 1.48mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Minimum Supply Voltage 4.5V | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
Automotive Standard AEC-Q100 | ||
Number of Words 512 | ||
Maximum Supply Voltage 5.5V | ||
The Cypress Semiconductor FM24C04B is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories.
4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
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