Infineon 4kbit I2C FRAM Memory 8-Pin SOIC, FM24C04B-GTR
- RS庫存編號:
- 215-5778
- 製造零件編號:
- FM24C04B-GTR
- 製造商:
- Infineon
可享批量折扣
小計(1 管,共 2500 件)*
TWD112,000.00
(不含稅)
TWD117,600.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,500 件從 2025年12月29日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 2500 - 2500 | TWD44.80 | TWD112,000.00 |
| 5000 + | TWD43.50 | TWD108,750.00 |
* 參考價格
- RS庫存編號:
- 215-5778
- 製造零件編號:
- FM24C04B-GTR
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 4kbit | |
| Organisation | 512 x 8 | |
| Interface Type | I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 10ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Width | 3.98mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 512 | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
| Minimum Operating Supply Voltage | 4.5 V | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 4kbit | ||
Organisation 512 x 8 | ||
Interface Type I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 10ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Width 3.98mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 512 | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 4.5 V | ||
The Cypress Semiconductor FM24C04B is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories.
4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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