Infineon 1 MB 2 Wire I2C FRAM 8-Pin SOIC

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小計（1 管，共 97 件）*

TWD46,579.40

(不含稅)

TWD48,908.37

(含稅)

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每單位
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97 - 97TWD480.20TWD46,579.40
194 +TWD469.60TWD45,551.20

* 參考價格

RS庫存編號:
188-5405
製造零件編號:
FM24V10-G
製造商:
Infineon
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品牌

Infineon

Product Type

FRAM

Memory Size

1MB

Organisation

128K x 8 bit

Interface Type

2 Wire I2C

Data Bus Width

8bit

Maximum Random Access Time

450ns

Maximum Clock Frequency

3.4MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Standards/Approvals

No

Height

1.38mm

Length

4.97mm

Width

3.98 mm

Maximum Operating Temperature

85°C

Maximum Supply Voltage

3.6V

Minimum Operating Temperature

-40°C

Number of Bits per Word

8

Minimum Supply Voltage

2V

Automotive Standard

AEC-Q100

Number of Words

128k

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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