Infineon 1Mbit I2C FRAM Memory 8-Pin SOIC, FM24V10-G

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小計（1 管，共 97 件）*

TWD46,579.40

(不含稅)

TWD48,908.37

(含稅)

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97 - 97TWD480.20TWD46,579.40
194 +TWD469.60TWD45,551.20

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RS庫存編號:
188-5405
製造零件編號:
FM24V10-G
製造商:
Infineon
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品牌

Infineon

Memory Size

1Mbit

Organisation

128K x 8 bit

Interface Type

I2C

Data Bus Width

8bit

Maximum Random Access Time

450ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.48mm

Length

4.97mm

Width

3.98mm

Maximum Operating Supply Voltage

3.6 V

Height

1.48mm

Maximum Operating Temperature

+85 °C

Number of Words

128k

Minimum Operating Temperature

-40 °C

Number of Bits per Word

8bit

Automotive Standard

AEC-Q100

Minimum Operating Supply Voltage

2 V

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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