Infineon 256 kB 2 Wire I2C FRAM 8-Pin SOIC

RS庫存編號:: 188-5407
製造零件編號:: FM24W256-G
製造商:: Infineon

Infineon 256 kB 2 Wire I2C FRAM 8-Pin SOIC

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 97 件）*

TWD14,889.50

(不含稅)

TWD15,634.46

訂單超過 $1,300.00 免費送貨

庫存資訊目前無法查詢

單位	每單位	每管*
97 - 97	TWD153.50	TWD14,889.50
194 - 291	TWD150.10	TWD14,559.70
388 +	TWD146.80	TWD14,239.60

* 參考價格

RS庫存編號:: 188-5407
製造零件編號:: FM24W256-G
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	FRAM
	Memory Size	256kB
	Organisation	32K x 8 Bit
	Interface Type	2 Wire I2C
	Data Bus Width	8bit
	Maximum Random Access Time	3000ns
	Maximum Clock Frequency	1MHz
	Mount Type	Surface
	Package Type	SOIC
	Pin Count	8
	Height	1.38mm
	Width	3.98 mm
	Length	4.97mm
	Standards/Approvals	No
	Maximum Operating Temperature	85°C
	Minimum Operating Temperature	-40°C
	Number of Words	32k
	Maximum Supply Voltage	5.5V
	Minimum Supply Voltage	2.7V
	Number of Bits per Word	8
	Automotive Standard	AEC-Q100

	選取全部
	品牌 Infineon
	Product Type FRAM
	Memory Size 256kB
	Organisation 32K x 8 Bit
	Interface Type 2 Wire I2C
	Data Bus Width 8bit
	Maximum Random Access Time 3000ns
	Maximum Clock Frequency 1MHz
	Mount Type Surface
	Package Type SOIC
	Pin Count 8
	Height 1.38mm
	Width 3.98 mm
	Length 4.97mm
	Standards/Approvals No
	Maximum Operating Temperature 85°C
	Minimum Operating Temperature -40°C
	Number of Words 32k
	Maximum Supply Voltage 5.5V
	Minimum Supply Voltage 2.7V
	Number of Bits per Word 8
	Automotive Standard AEC-Q100

Datasheet FM24W256-G

COO (Country of Origin):: US

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 256 kB 2 Wire I2C FRAM 8-Pin SOIC

訂單超過 $1,300.00 免費送貨

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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