Infineon 64kbit I2C FRAM Memory 8-Pin SOIC, FM24C64B-G
- RS庫存編號:
- 188-5397
- 製造零件編號:
- FM24C64B-G
- 製造商:
- Infineon
可享批量折扣
小計(1 管,共 97 件)*
TWD7,051.90
(不含稅)
TWD7,404.98
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,843 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 97 - 97 | TWD72.70 | TWD7,051.90 |
| 194 - 291 | TWD71.10 | TWD6,896.70 |
| 388 + | TWD69.60 | TWD6,751.20 |
* 參考價格
- RS庫存編號:
- 188-5397
- 製造零件編號:
- FM24C64B-G
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 64kbit | |
| Organisation | 8K x 8 bit | |
| Interface Type | I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 550ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Width | 3.98mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Automotive Standard | AEC-Q100 | |
| Number of Words | 8k | |
| Minimum Operating Temperature | -40 °C | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Supply Voltage | 4.5 V | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 64kbit | ||
Organisation 8K x 8 bit | ||
Interface Type I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 550ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Width 3.98mm | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Automotive Standard AEC-Q100 | ||
Number of Words 8k | ||
Minimum Operating Temperature -40 °C | ||
Number of Bits per Word 8bit | ||
Minimum Operating Supply Voltage 4.5 V | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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