Infineon 256kbit Parallel FRAM Memory 28-Pin SOIC, FM18W08-SG

查看所有FRAM Memory
可享批量折扣

小計（1 管，共 27 件）*

TWD9,917.10

(不含稅)

TWD10,412.82

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 加上 108 件從 2025年12月29日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每管*
27 - 27TWD367.30TWD9,917.10
54 +TWD359.10TWD9,695.70

* 參考價格

RS庫存編號:
188-5394
製造零件編號:
FM18W08-SG
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Memory Size

256kbit

Organisation

32K x 8 bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

28

Dimensions

18.11 x 7.62 x 2.37mm

Length

18.11mm

Width

7.62mm

Maximum Operating Supply Voltage

5.5 V

Height

2.37mm

Maximum Operating Temperature

+85 °C

Automotive Standard

AEC-Q100

Number of Bits per Word

8bit

Number of Words

32k

Minimum Operating Supply Voltage

2.7 V

Minimum Operating Temperature

-40 °C

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

相關連結