Infineon 64 kB Parallel FRAM 28-Pin SOIC-28, FM16W08-SG
- RS庫存編號:
- 273-7374
- 製造零件編號:
- FM16W08-SG
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 27 件)*
TWD4,779.00
(不含稅)
TWD5,017.95
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月25日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 27 - 81 | TWD177.00 | TWD4,779.00 |
| 108 + | TWD171.70 | TWD4,635.90 |
* 參考價格
- RS庫存編號:
- 273-7374
- 製造零件編號:
- FM16W08-SG
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 64kB | |
| Product Type | FRAM | |
| Organisation | 8k x 8 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Package Type | SOIC-28 | |
| Pin Count | 28 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Automotive Standard | No | |
| Number of Words | 8K | |
| Minimum Supply Voltage | 2.7V | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 64kB | ||
Product Type FRAM | ||
Organisation 8k x 8 bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Package Type SOIC-28 | ||
Pin Count 28 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Automotive Standard No | ||
Number of Words 8K | ||
Minimum Supply Voltage 2.7V | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
The Infineon FRAM is a 8 K x 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory. Its operation is similar to that of other RAM devices and therefore, it can be used as a drop in replacement for a standard SRAM in a system. Minimum read and write cycle times are equal. The FRAM memory is non volatile due to its unique ferroelectric memory process.
Low power consumption
SRAM and EEPROM compatible
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
Superior for moisture and shock with vibration
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