Infineon 256kbit I2C FRAM Memory 28-Pin SOIC, FM18W08-SGTR
- RS庫存編號:
- 273-5303
- 製造零件編號:
- FM18W08-SGTR
- 製造商:
- Infineon
小計(1 卷,共 1000 件)*
TWD390,800.00
(不含稅)
TWD410,340.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年3月30日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 + | TWD390.80 | TWD390,800.00 |
* 參考價格
- RS庫存編號:
- 273-5303
- 製造零件編號:
- FM18W08-SGTR
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 256kbit | |
| Organisation | 32K x 8 | |
| Interface Type | I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Package Type | SOIC | |
| Pin Count | 28 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 256kbit | ||
Organisation 32K x 8 | ||
Interface Type I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Package Type SOIC | ||
Pin Count 28 | ||
The Infineon FRAM Memory is a 32 K x 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that detail retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory.
RoHS compliant
Low power consumption
SRAM and EEPROM compatible
Superior to battery backed SRAM modules
Resistant to negative voltage undershoots
Low power consumption
SRAM and EEPROM compatible
Superior to battery backed SRAM modules
Resistant to negative voltage undershoots
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
相關連結
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