Infineon 4Mbit SPI FRAM Memory 8-Pin SOIC, CY15B104Q-SXI

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小計（1 管，共 94 件）*

TWD75,726.40

(不含稅)

TWD79,512.72

(含稅)

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94 - 94TWD805.60TWD75,726.40
188 +TWD787.90TWD74,062.60

* 參考價格

RS庫存編號:
188-5304
製造零件編號:
CY15B104Q-SXI
製造商:
Infineon
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品牌

Infineon

Memory Size

4Mbit

Organisation

512k x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

5.33 x 5.33 x 1.78mm

Length

5.33mm

Width

5.33mm

Maximum Operating Supply Voltage

3.6 V

Height

1.78mm

Maximum Operating Temperature

+85 °C

Minimum Operating Supply Voltage

2 V

Minimum Operating Temperature

-40 °C

Number of Bits per Word

8bit

Number of Words

512k

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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