可享批量折扣
小計(1 管,共 97 件)*
TWD36,006.40
(不含稅)
TWD37,806.72
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 970 件從 2026年1月05日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 97 - 97 | TWD371.20 | TWD36,006.40 |
| 194 + | TWD363.10 | TWD35,220.70 |
* 參考價格
- RS庫存編號:
- 188-5421
- 製造零件編號:
- FM25V10-G
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 1Mbit | |
| Organisation | 128k x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 18ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Width | 3.98mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 128k | |
| Automotive Standard | AEC-Q100 | |
| Minimum Operating Supply Voltage | 2 V | |
| Minimum Operating Temperature | -40 °C | |
| Number of Bits per Word | 8bit | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 1Mbit | ||
Organisation 128k x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 18ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Width 3.98mm | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 128k | ||
Automotive Standard AEC-Q100 | ||
Minimum Operating Supply Voltage 2 V | ||
Minimum Operating Temperature -40 °C | ||
Number of Bits per Word 8bit | ||
- COO (Country of Origin):
- US
Infineon Fram Memory, 1Mbit Memory size, 128K x 8 Bit Organisation - FM25V10-G
This FRAM memory is designed for high-speed data storage solutions, featuring a memory size of 1 Mbit, organised as 128K x 8 bits. Using surface mount technology, it facilitates easy integration into various electronic systems. The compact dimensions measure 4.97mm x 3.98mm x 1.47mm, providing versatility for space-sensitive applications.
Features & Benefits
• Fast write operations with no delays enhance efficiency
• Supports up to 40MHz SPI interface for high-speed memory access
• AEC-Q100 compliant, ensuring reliable automotive memory solutions
• Advanced write protection prevents accidental data modification
• Supports up to 40MHz SPI interface for high-speed memory access
• AEC-Q100 compliant, ensuring reliable automotive memory solutions
• Advanced write protection prevents accidental data modification
Applications
• Integrated into automotive control systems for data logging
• Utilised in industrial automation for rapid data collection
• Ideal for medical devices requiring non-volatile storage
• Deployed in consumer electronics for enhanced performance
• Used in IoT devices for reliable memory retention
• Utilised in industrial automation for rapid data collection
• Ideal for medical devices requiring non-volatile storage
• Deployed in consumer electronics for enhanced performance
• Used in IoT devices for reliable memory retention
What advantages does this memory offer for industrial applications?
The ability to perform fast write operations at bus speed ensures that data can be captured quickly in industrial settings, reducing the risk of data loss in time-sensitive scenarios. Its robust write endurance of 100 trillion cycles further supports frequent data logging.
How does its power consumption compare with traditional memory solutions?
It operates efficiently, consuming only 300μA when active and as low as 5μA in sleep mode. This low power requirement makes it ideal for battery-operated devices or applications where energy efficiency is critical.
What benefits do the built-in protection features provide?
The sophisticated write protection mechanism includes both hardware and software controls, preventing unintended writes and ensuring that critical data remains safe from accidental changes, which is essential in mission-critical systems.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
相關連結
- Infineon 1Mbit SPI FRAM Memory 8-Pin SOIC, FM25V10-G
- Infineon 1Mbit Serial-SPI FRAM Memory 8-Pin SOIC, FM25V10-GTR
- Infineon 1Mbit SPI FRAM Memory 8-Pin SOIC, FM25VN10-G
- Infineon 1Mbit I2C FRAM Memory 8-Pin SOIC, FM24V10-G
- Infineon 1Mbit Serial-I2C FRAM Memory 8-Pin SOIC, FM24VN10-G
- Infineon 4kbit SPI FRAM Memory 8-Pin SOIC, FM25040B-G
- Infineon 256kbit SPI FRAM Memory 8-Pin SOIC, FM25W256-G
- Infineon 64kbit SPI FRAM Memory 8-Pin SOIC, FM25640B-G
