Infineon 1Mbit SPI FRAM Memory 8-Pin SOIC, FM25V10-G

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TWD36,006.40

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TWD37,806.72

(含稅)

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RS庫存編號:
188-5421
製造零件編號:
FM25V10-G
製造商:
Infineon
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品牌

Infineon

Memory Size

1Mbit

Organisation

128k x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

18ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.48mm

Length

4.97mm

Maximum Operating Supply Voltage

3.6 V

Width

3.98mm

Height

1.48mm

Maximum Operating Temperature

+85 °C

Number of Words

128k

Automotive Standard

AEC-Q100

Minimum Operating Supply Voltage

2 V

Minimum Operating Temperature

-40 °C

Number of Bits per Word

8bit

COO (Country of Origin):
US

Infineon Fram Memory, 1Mbit Memory size, 128K x 8 Bit Organisation - FM25V10-G


This FRAM memory is designed for high-speed data storage solutions, featuring a memory size of 1 Mbit, organised as 128K x 8 bits. Using surface mount technology, it facilitates easy integration into various electronic systems. The compact dimensions measure 4.97mm x 3.98mm x 1.47mm, providing versatility for space-sensitive applications.

Features & Benefits


• Fast write operations with no delays enhance efficiency
• Supports up to 40MHz SPI interface for high-speed memory access
• AEC-Q100 compliant, ensuring reliable automotive memory solutions
• Advanced write protection prevents accidental data modification

Applications


• Integrated into automotive control systems for data logging
• Utilised in industrial automation for rapid data collection
• Ideal for medical devices requiring non-volatile storage
• Deployed in consumer electronics for enhanced performance
• Used in IoT devices for reliable memory retention

What advantages does this memory offer for industrial applications?


The ability to perform fast write operations at bus speed ensures that data can be captured quickly in industrial settings, reducing the risk of data loss in time-sensitive scenarios. Its robust write endurance of 100 trillion cycles further supports frequent data logging.

How does its power consumption compare with traditional memory solutions?


It operates efficiently, consuming only 300μA when active and as low as 5μA in sleep mode. This low power requirement makes it ideal for battery-operated devices or applications where energy efficiency is critical.

What benefits do the built-in protection features provide?


The sophisticated write protection mechanism includes both hardware and software controls, preventing unintended writes and ensuring that critical data remains safe from accidental changes, which is essential in mission-critical systems.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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