onsemi MMBTA06WT1G Digital Transistor, 80 V dc NPN Surface, 3-Pin
- RS庫存編號:
- 186-8565
- 製造零件編號:
- MMBTA06WT1G
- 製造商:
- onsemi
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- RS庫存編號:
- 186-8565
- 製造零件編號:
- MMBTA06WT1G
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | 80V dc | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 80V dc | |
| Maximum Power Dissipation Pd | 460mW | |
| Minimum DC Current Gain hFE | 100 | |
| Maximum Emitter Base Voltage VEBO | 4V dc | |
| Transistor Polarity | NPN | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Series | MMBTA06W | |
| Width | 2.4mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo 80V dc | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 80V dc | ||
Maximum Power Dissipation Pd 460mW | ||
Minimum DC Current Gain hFE 100 | ||
Maximum Emitter Base Voltage VEBO 4V dc | ||
Transistor Polarity NPN | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Series MMBTA06W | ||
Width 2.4mm | ||
Automotive Standard AEC-Q101 | ||
The NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package, which is designed for low power surface mount applications.
Moisture Sensitivity Level: 1
ESD Rating: Human Body Model - 4 kV Machine Model - 400 V
Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable