onsemi Digital Transistor, 80 V dc NPN Through Hole TO-220, 3-Pin
- RS庫存編號:
- 186-7366
- 製造零件編號:
- BDX33BG
- 製造商:
- onsemi
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可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
TWD1,265.00
(不含稅)
TWD1,328.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 50 件從 2027年2月24日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD25.30 | TWD1,265.00 |
| 100 - 150 | TWD24.50 | TWD1,225.00 |
| 200 + | TWD23.80 | TWD1,190.00 |
* 參考價格
- RS庫存編號:
- 186-7366
- 製造零件編號:
- BDX33BG
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | TO-220 | |
| Maximum Collector Emitter Voltage Vceo | 80V dc | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 80V dc | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Minimum DC Current Gain hFE | 750 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 70W | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Standards/Approvals | No | |
| Length | 10.53mm | |
| Height | 9.28mm | |
| Width | 4.83mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Digital Transistor | ||
Package Type TO-220 | ||
Maximum Collector Emitter Voltage Vceo 80V dc | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 80V dc | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Minimum DC Current Gain hFE 750 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 70W | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Standards/Approvals No | ||
Length 10.53mm | ||
Height 9.28mm | ||
Width 4.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.
High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0
Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
Monolithic Construction with Build-In Base-Emitter Shunt resistors
TO-220AB Compact Package
Pb-Free Packages are Available