onsemi MJB44H11G Transistor, 20 A NPN, 80 V dc, 4-Pin TO-263
- RS庫存編號:
- 184-4959
- 製造零件編號:
- MJB44H11G
- 製造商:
- onsemi
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TWD294.00
(不含稅)
TWD308.70
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 40 件從 2026年9月14日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD29.40 | TWD294.00 |
| 20 - 20 | TWD28.60 | TWD286.00 |
| 30 + | TWD28.20 | TWD282.00 |
* 參考價格
- RS庫存編號:
- 184-4959
- 製造零件編號:
- MJB44H11G
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 20A | |
| Maximum Collector Emitter Voltage Vceo | 80V dc | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Transition Frequency ft | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 60 | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Length | 11.05mm | |
| Width | 10.29mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 20A | ||
Maximum Collector Emitter Voltage Vceo 80V dc | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Transition Frequency ft 1MHz | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 60 | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Length 11.05mm | ||
Width 10.29mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Automotive Standard AEC-Q101 | ||
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free
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