onsemi MJB44H11G Transistor, 20 A NPN, 80 V dc, 4-Pin TO-263

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小計(1 管,共 50 件)*

TWD1,470.00

(不含稅)

TWD1,543.50

(含稅)

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  • 從 2027年3月09日 發貨
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每單位
每管*
50 - 50TWD29.40TWD1,470.00
100 - 150TWD28.80TWD1,440.00
200 +TWD28.20TWD1,410.00

* 參考價格

RS庫存編號:
184-4309
製造零件編號:
MJB44H11G
製造商:
onsemi
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品牌

onsemi

Product Type

Transistor

Maximum DC Collector Current Idc

20A

Maximum Collector Emitter Voltage Vceo

80V dc

Package Type

TO-263

Mount Type

Surface

Transistor Configuration

Single

Minimum Operating Temperature

-55°C

Minimum DC Current Gain hFE

60

Maximum Emitter Base Voltage VEBO

5V dc

Maximum Transition Frequency ft

1MHz

Transistor Polarity

NPN

Maximum Power Dissipation Pd

50W

Pin Count

4

Maximum Operating Temperature

150°C

Width

10.29mm

Standards/Approvals

No

Length

11.05mm

Height

4.83mm

Automotive Standard

AEC-Q101

The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.

Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A

Fast Switching Speeds

Complementary Pairs Simplifies Designs

NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP Capable

These Devices are Pb-Free, Halogen Free/BFR Free

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