onsemi MJ2955G Transistor, -15 A PNP, -70 V, 3-Pin TO-204
- RS庫存編號:
- 184-4954
- 製造零件編號:
- MJ2955G
- 製造商:
- onsemi
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可享批量折扣
查看批量定價選項小計（10 件, 每袋10個）*
TWD1,420.00
(不含稅)
TWD1,491.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 80 件從 2026年10月05日 起裝運發貨
- 加上 100 件從 2026年12月02日 起發貨
- 加上 100 件從 2026年12月09日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 20 | TWD142.00 | TWD1,420.00 |
| 30 - 40 | TWD139.50 | TWD1,395.00 |
| 50 + | TWD137.30 | TWD1,373.00 |
* 參考價格
- RS庫存編號:
- 184-4954
- 製造零件編號:
- MJ2955G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -15A | |
| Maximum Collector Emitter Voltage Vceo | -70V | |
| Package Type | TO-204 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 100V dc | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 7V dc | |
| Minimum DC Current Gain hFE | 20 | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 115W | |
| Maximum Transition Frequency ft | 1MHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 200°C | |
| Height | 8.51mm | |
| Length | 39.37mm | |
| Width | 26.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -15A | ||
Maximum Collector Emitter Voltage Vceo -70V | ||
Package Type TO-204 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 100V dc | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 7V dc | ||
Minimum DC Current Gain hFE 20 | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 115W | ||
Maximum Transition Frequency ft 1MHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 200°C | ||
Height 8.51mm | ||
Length 39.37mm | ||
Width 26.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.
DC Current Gain - hFE = 20-70 @ IC = 4 Adc
Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Excellent Safe Operating Area
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