onsemi Transistor, -15 A PNP, -70 V, 3-Pin TO-204
- RS庫存編號:
- 184-4308
- 製造零件編號:
- MJ2955G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 盒，共 100 件）*
TWD10,170.00
(不含稅)
TWD10,678.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 100 件從 2026年9月23日 起裝運發貨
- 加上 100 件從 2026年12月02日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每盒* |
|---|---|---|
| 100 - 100 | TWD101.70 | TWD10,170.00 |
| 200 - 300 | TWD98.70 | TWD9,870.00 |
| 400 + | TWD96.70 | TWD9,670.00 |
* 參考價格
- RS庫存編號:
- 184-4308
- 製造零件編號:
- MJ2955G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -15A | |
| Maximum Collector Emitter Voltage Vceo | -70V | |
| Package Type | TO-204 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 100V dc | |
| Maximum Transition Frequency ft | 1MHz | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 115W | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 20 | |
| Maximum Emitter Base Voltage VEBO | 7V dc | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Width | 26.67mm | |
| Length | 39.37mm | |
| Height | 8.51mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -15A | ||
Maximum Collector Emitter Voltage Vceo -70V | ||
Package Type TO-204 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 100V dc | ||
Maximum Transition Frequency ft 1MHz | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 115W | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 20 | ||
Maximum Emitter Base Voltage VEBO 7V dc | ||
Pin Count 3 | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Width 26.67mm | ||
Length 39.37mm | ||
Height 8.51mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.
DC Current Gain - hFE = 20-70 @ IC = 4 Adc
Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Excellent Safe Operating Area
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