onsemi 2SC6144SG Bipolar Transistor, 10 A NPN, 50 V, 3-Pin TO-220
- RS庫存編號:
- 184-4163
- 製造零件編號:
- 2SC6144SG
- 製造商:
- onsemi
可享批量折扣
查看批量定價選項小計（50 件, 每管50個）*
TWD1,640.00
(不含稅)
TWD1,722.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 300 件準備從其他地點送貨
- 加上 100 件從 2027年1月07日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 450 | TWD32.80 | TWD1,640.00 |
| 500 - 950 | TWD31.80 | TWD1,590.00 |
| 1000 + | TWD31.20 | TWD1,560.00 |
* 參考價格
- RS庫存編號:
- 184-4163
- 製造零件編號:
- 2SC6144SG
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 60V | |
| Maximum Transition Frequency ft | 1MHz | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Power Dissipation Pd | 25W | |
| Minimum DC Current Gain hFE | 200 | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 10.16mm | |
| Width | 4.7mm | |
| Standards/Approvals | No | |
| Height | 28.85mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 60V | ||
Maximum Transition Frequency ft 1MHz | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Power Dissipation Pd 25W | ||
Minimum DC Current Gain hFE 200 | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 10.16mm | ||
Width 4.7mm | ||
Standards/Approvals No | ||
Height 28.85mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
2SC6144SG is a Bipolar Transistor, 50V, 10A, Low VCE(sat), NPN TO-220F-3FS for High-Current Switching Applications.
Adoption of MBIT process
Low collector-to-emitter saturation voltage :VCE(sat)=180mV (typ)
High-speed switching : tf=25ns (typ)
Large current capacitance : IC=10A
Applications
Relay drivers, lamp drivers, motor drivers
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