STMicroelectronics Bipolar Transistor, 8 A NPN, 450 V, 3-Pin TO-220
- RS庫存編號:
- 188-8269
- 製造零件編號:
- BUL1102EFP
- 製造商:
- STMicroelectronics
可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
TWD1,825.00
(不含稅)
TWD1,916.00
(含稅)
訂單超過 $1,300.00 免費送貨
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- 1,600 件準備從其他地點送貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD36.50 | TWD1,825.00 |
| 100 - 150 | TWD35.40 | TWD1,770.00 |
| 200 + | TWD34.70 | TWD1,735.00 |
* 參考價格
- RS庫存編號:
- 188-8269
- 製造零件編號:
- BUL1102EFP
- 製造商:
- STMicroelectronics
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 8A | |
| Maximum Collector Emitter Voltage Vceo | 450V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Emitter Base Voltage VEBO | 12V | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 12 | |
| Maximum Power Dissipation Pd | 70W | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 30.6mm | |
| Length | 10.4mm | |
| Width | 4.6mm | |
| Series | BUL1102E | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 8A | ||
Maximum Collector Emitter Voltage Vceo 450V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Emitter Base Voltage VEBO 12V | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 12 | ||
Maximum Power Dissipation Pd 70W | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 30.6mm | ||
Length 10.4mm | ||
Width 4.6mm | ||
Series BUL1102E | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial Planar technology. It uses a cellular emitter structure with Planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
High voltage capability
Very high switching speed
Applications
Four lamp electronic ballast for:
120 V mains in push-pull configuration
277 V mains in half bridge current feed configuration
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