Nexperia Transistor, -5.7 A PNP, -60 V, 4-Pin SOT-223
- RS庫存編號:
- 166-0002
- 製造零件編號:
- PBSS4041PZ,115
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1000 件）*
TWD15,600.00
(不含稅)
TWD16,380.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年10月29日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 4000 | TWD15.60 | TWD15,600.00 |
| 5000 + | TWD15.10 | TWD15,100.00 |
* 參考價格
- RS庫存編號:
- 166-0002
- 製造零件編號:
- PBSS4041PZ,115
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -5.7A | |
| Maximum Collector Emitter Voltage Vceo | -60V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | -60V | |
| Maximum Power Dissipation Pd | 2.6W | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | -5V | |
| Maximum Transition Frequency ft | 100MHz | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 120 | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 6.7mm | |
| Series | PBSS4041PZ | |
| Height | 1.8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -5.7A | ||
Maximum Collector Emitter Voltage Vceo -60V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO -60V | ||
Maximum Power Dissipation Pd 2.6W | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO -5V | ||
Maximum Transition Frequency ft 100MHz | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 120 | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 6.7mm | ||
Series PBSS4041PZ | ||
Height 1.8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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