Nexperia PBSS4032PZ,115 Transistor, -4.9 A PNP, -30 V, 4-Pin SOT-223
- RS庫存編號:
- 165-9999
- 製造零件編號:
- PBSS4032PZ,115
- 製造商:
- Nexperia
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- RS庫存編號:
- 165-9999
- 製造零件編號:
- PBSS4032PZ,115
- 製造商:
- Nexperia
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -4.9A | |
| Maximum Collector Emitter Voltage Vceo | -30V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | -30V | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Emitter Base Voltage VEBO | -5V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Transition Frequency ft | 100MHz | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Standards/Approvals | RoHS | |
| Width | 7.3mm | |
| Series | PBSS4032PZ | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -4.9A | ||
Maximum Collector Emitter Voltage Vceo -30V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO -30V | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Emitter Base Voltage VEBO -5V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Transition Frequency ft 100MHz | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 6.7mm | ||
Height 1.8mm | ||
Standards/Approvals RoHS | ||
Width 7.3mm | ||
Series PBSS4032PZ | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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