Littelfuse SP721ABTG 6-Element Bi-Directional TVS Diode Array, 8-Pin SOIC
- RS庫存編號:
- 171-4325
- 製造零件編號:
- SP721ABTG
- 製造商:
- Littelfuse
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TWD237.00
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TWD248.84
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
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| 626 - 1248 | TWD115.50 | TWD231.00 |
| 1250 + | TWD112.50 | TWD225.00 |
* 參考價格
- RS庫存編號:
- 171-4325
- 製造零件編號:
- SP721ABTG
- 製造商:
- Littelfuse
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Littelfuse | |
| Direction Type | Bi-Directional | |
| Diode Configuration | Array | |
| Product Type | TVS Diode Array | |
| Minimum Breakdown Voltage Vbr | 2V | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Maximum Reverse Stand-off Voltage Vwm | 30V | |
| Pin Count | 8 | |
| Maximum Peak Pulse Current Ippm | 2A | |
| ESD Protection | Yes | |
| Minimum Operating Temperature | -40°C | |
| Test Current It | 1A | |
| Maximum Operating Temperature | 105°C | |
| Number of Elements per Chip | 6 | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Length | 5mm | |
| Series | SP721 | |
| Automotive Standard | No | |
| Maximum Reverse Leakage Current | 20μA | |
| 選取全部 | ||
|---|---|---|
品牌 Littelfuse | ||
Direction Type Bi-Directional | ||
Diode Configuration Array | ||
Product Type TVS Diode Array | ||
Minimum Breakdown Voltage Vbr 2V | ||
Mount Type Surface | ||
Package Type SOIC | ||
Maximum Reverse Stand-off Voltage Vwm 30V | ||
Pin Count 8 | ||
Maximum Peak Pulse Current Ippm 2A | ||
ESD Protection Yes | ||
Minimum Operating Temperature -40°C | ||
Test Current It 1A | ||
Maximum Operating Temperature 105°C | ||
Number of Elements per Chip 6 | ||
Width 4mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Length 5mm | ||
Series SP721 | ||
Automotive Standard No | ||
Maximum Reverse Leakage Current 20μA | ||
The SP721 is an array of SCR/Diode bipolar structures for ESD and over-voltage protection to sensitive input circuits. The SP721 has 2 protection SCR/Diode device structures per input. There are a total of 6 available inputs that can be used to protect up to 6 external signal or bus lines. Overvoltage protection is from the IN (Pins 1 - 3 and Pins 5 - 7) to V+ or V-. The SCR structures are designed for fast triggering at a threshold of one +VBE diode threshold above V+ (Pin 8) or a -VBE diode threshold below V- (Pin 4). From an IN input, a clamp to V+ is activated if a transient pulse causes the input to be increased to a voltage level greater than one VBE above V+. A similar clamp to V- is activated if a negative pulse, one VBE less than V-, is applied to an IN input.
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