ROHM Silicon Junction, 2x Common Cathode Pair, 1 A, 3-Pin 350 V TO-252GE RFN10BGE3STL
- RS庫存編號:
- 223-6299
- 製造零件編號:
- RFN10BGE3STL
- 製造商:
- ROHM
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可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD277.00
(不含稅)
TWD290.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月11日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD27.70 | TWD277.00 |
| 50 - 90 | TWD27.00 | TWD270.00 |
| 100 - 240 | TWD26.40 | TWD264.00 |
| 250 - 990 | TWD25.60 | TWD256.00 |
| 1000 + | TWD25.10 | TWD251.00 |
* 參考價格
- RS庫存編號:
- 223-6299
- 製造零件編號:
- RFN10BGE3STL
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Maximum Forward Current If | 1A | |
| Diode Configuration | 2x Common Cathode Pair | |
| Product Type | Silicon Junction | |
| Mount Type | Surface | |
| Sub Type | Silicon Junction | |
| Package Type | TO-252GE | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 80A | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 350V | |
| Peak Reverse Recovery Time trr | 30ns | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.3mm | |
| Series | RFN10BGE3S | |
| Length | 10mm | |
| Width | 6.6mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Maximum Forward Current If 1A | ||
Diode Configuration 2x Common Cathode Pair | ||
Product Type Silicon Junction | ||
Mount Type Surface | ||
Sub Type Silicon Junction | ||
Package Type TO-252GE | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 80A | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 350V | ||
Peak Reverse Recovery Time trr 30ns | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Height 2.3mm | ||
Series RFN10BGE3S | ||
Length 10mm | ||
Width 6.6mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM super fast recovery diode mainly used for general rectification. It has 350 V reverse voltage rating.
Low switching loss
High current overload capacity
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