Nexperia Silicon Junction, Series, 200 mA, 6-Pin 100 V SC-88
- RS庫存編號:
- 178-7112
- 製造零件編號:
- BAV99S,115
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD7,200.00
(不含稅)
TWD7,560.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 6,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD2.40 | TWD7,200.00 |
| 6000 + | TWD2.30 | TWD6,900.00 |
* 參考價格
- RS庫存編號:
- 178-7112
- 製造零件編號:
- BAV99S,115
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Diode Configuration | Series | |
| Maximum Forward Current If | 200mA | |
| Product Type | Silicon Junction | |
| Sub Type | Silicon Junction | |
| Mount Type | Surface | |
| Package Type | SC-88 | |
| Pin Count | 6 | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 100V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 4A | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 250mW | |
| Maximum Forward Voltage Vf | 1.25V | |
| Peak Reverse Recovery Time trr | 4ns | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.35mm | |
| Length | 2.2mm | |
| Series | BAV99 | |
| Height | 1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Diode Configuration Series | ||
Maximum Forward Current If 200mA | ||
Product Type Silicon Junction | ||
Sub Type Silicon Junction | ||
Mount Type Surface | ||
Package Type SC-88 | ||
Pin Count 6 | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 100V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 4A | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 250mW | ||
Maximum Forward Voltage Vf 1.25V | ||
Peak Reverse Recovery Time trr 4ns | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.35mm | ||
Length 2.2mm | ||
Series BAV99 | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
High speed switching diodes fabricated in planar technology with a maximum switching speed of 4 ns. Supports customized high density circuit designs encapsulated in hermetically sealed packaging.
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
High switching speed: trr ≤ 4 ns
Low capacitance: Cd ≤ 1.5 pF
Low leakage current
Reverse voltage: VR ≤ 100 V
Small SMD plastic packages
Target applications
High-speed switching
General-purpose switching
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