Nexperia Silicon Junction, Single, 400 mA, 3-Pin 250 V SOT-23 BAS21,215
- RS庫存編號:
- 785-414
- 製造零件編號:
- BAS21,215
- 製造商:
- Nexperia
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可享批量折扣
查看批量定價選項小計（1 包，共 20 件）*
TWD52.00
(不含稅)
TWD54.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 640 件從 2026年9月07日 起發貨
- 加上 2,660 件從 2026年9月14日 起發貨
- 加上 3,000 件從 2026年10月14日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | TWD2.60 | TWD52.00 |
| 760 - 1480 | TWD2.50 | TWD50.00 |
| 1500 + | TWD2.40 | TWD48.00 |
* 參考價格
- RS庫存編號:
- 785-414
- 製造零件編號:
- BAS21,215
- 製造商:
- Nexperia
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Maximum Forward Current If | 400mA | |
| Product Type | Silicon Junction | |
| Diode Configuration | Single | |
| Sub Type | Silicon Junction | |
| Mount Type | Surface | |
| Package Type | SOT-23 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -65°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1.7A | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 250V | |
| Maximum Forward Voltage Vf | 1.25V | |
| Maximum Power Dissipation Pd | 250mW | |
| Peak Reverse Recovery Time trr | 50ns | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 3mm | |
| Series | BAS21 | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Maximum Forward Current If 400mA | ||
Product Type Silicon Junction | ||
Diode Configuration Single | ||
Sub Type Silicon Junction | ||
Mount Type Surface | ||
Package Type SOT-23 | ||
Pin Count 3 | ||
Minimum Operating Temperature -65°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1.7A | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 250V | ||
Maximum Forward Voltage Vf 1.25V | ||
Maximum Power Dissipation Pd 250mW | ||
Peak Reverse Recovery Time trr 50ns | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 3mm | ||
Series BAS21 | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Automotive Standard No | ||
Solutions for high voltage systems. Fabricated in planar technology, our ≥ 100 V diodes deliver up to 4 ns (max.) switching speed. They support customized high density circuit designs and are encapsulated in hermetically sealed packaging.
High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package.
High switching speed: trr ≤ 50 ns
Low leakage current
Reverse voltage VR ≤ 200 V
Low capacitance: Cd ≤ 5 pF
Small SMD plastic package
Target applications
High-speed switching at high voltage
High-voltage general-purpose switching
Voltage clamping
Reverse polarity protection
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