Nexperia Silicon Junction, Single, 215 mA, 2-Pin 100 V SOD-523 BAS516,115
- RS庫存編號:
- 508-282
- 製造零件編號:
- BAS516,115
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 100 件）*
TWD180.00
(不含稅)
TWD189.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月22日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 100 - 700 | TWD1.80 | TWD180.00 |
| 800 - 1400 | TWD1.80 | TWD180.00 |
| 1500 + | TWD1.70 | TWD170.00 |
* 參考價格
- RS庫存編號:
- 508-282
- 製造零件編號:
- BAS516,115
- 製造商:
- Nexperia
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Maximum Forward Current If | 215mA | |
| Product Type | Silicon Junction | |
| Diode Configuration | Single | |
| Mount Type | Surface | |
| Sub Type | Silicon Junction | |
| Package Type | SOD-523 | |
| Pin Count | 2 | |
| Maximum Power Dissipation Pd | 500mW | |
| Peak Reverse Recovery Time trr | 4ns | |
| Minimum Operating Temperature | -65°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 4A | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 100V | |
| Maximum Forward Voltage Vf | 1.25V | |
| Maximum Operating Temperature | 150°C | |
| Series | BAS516 | |
| Standards/Approvals | No | |
| Length | 1.25mm | |
| Height | 0.65mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Maximum Forward Current If 215mA | ||
Product Type Silicon Junction | ||
Diode Configuration Single | ||
Mount Type Surface | ||
Sub Type Silicon Junction | ||
Package Type SOD-523 | ||
Pin Count 2 | ||
Maximum Power Dissipation Pd 500mW | ||
Peak Reverse Recovery Time trr 4ns | ||
Minimum Operating Temperature -65°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 4A | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 100V | ||
Maximum Forward Voltage Vf 1.25V | ||
Maximum Operating Temperature 150°C | ||
Series BAS516 | ||
Standards/Approvals No | ||
Length 1.25mm | ||
Height 0.65mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Fast switching. High speed switching diodes fabricated in planar technology with a maximum switching speed of 4 ns. Supports customized high density circuit designs encapsulated in hermetically sealed packaging.
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
High switching speed: trr ≤ 4 ns
Low capacitance
Low leakage current
Reverse voltage: VR ≤ 100 V
Repetitive peak reverse voltage: VRRM ≤ 100 V
Small SMD plastic packages
Target applications
High-speed switching
General-purpose switching
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