Renesas Electronics SRAM, 71V016SA12PHG8- 1 MB
- RS庫存編號:
- 264-1296
- 製造零件編號:
- 71V016SA12PHG8
- 製造商:
- Renesas Electronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD460.00
(不含稅)
TWD483.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月03日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD92.00 | TWD460.00 |
| 50 - 95 | TWD81.00 | TWD405.00 |
| 100 - 245 | TWD72.40 | TWD362.00 |
| 250 - 495 | TWD70.40 | TWD352.00 |
| 500 + | TWD70.00 | TWD350.00 |
* 參考價格
- RS庫存編號:
- 264-1296
- 製造零件編號:
- 71V016SA12PHG8
- 製造商:
- Renesas Electronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Renesas Electronics | |
| Memory Size | 1MB | |
| Product Type | SRAM | |
| Organisation | 64k x 16 | |
| Number of Words | 64K | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 20ns | |
| Timing Type | Asynchronous | |
| Minimum Supply Voltage | 3V | |
| Mount Type | Surface | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 48 | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 18.41mm | |
| Series | IDT71V016 | |
| Width | 10.16 mm | |
| Supply Current | 170mA | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Renesas Electronics | ||
Memory Size 1MB | ||
Product Type SRAM | ||
Organisation 64k x 16 | ||
Number of Words 64K | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 20ns | ||
Timing Type Asynchronous | ||
Minimum Supply Voltage 3V | ||
Mount Type Surface | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Pin Count 48 | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 18.41mm | ||
Series IDT71V016 | ||
Width 10.16 mm | ||
Supply Current 170mA | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Renesas Electronics high-speed static RAM organized as 64K x 16. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.
Low power consumption via chip deselect
Equal access and cycle times
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