Renesas Electronics SRAM, 71V016SA12PHG8- 1 MB

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TWD464.00

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TWD487.20

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  • 2026年10月30日 發貨
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每單位
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5 - 45TWD92.80TWD464.00
50 - 95TWD81.80TWD409.00
100 - 245TWD73.00TWD365.00
250 - 495TWD71.00TWD355.00
500 +TWD70.60TWD353.00

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包裝方式:
RS庫存編號:
264-1296
製造零件編號:
71V016SA12PHG8
製造商:
Renesas Electronics
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品牌

Renesas Electronics

Product Type

SRAM

Memory Size

1MB

Number of Words

64K

Number of Bits per Word

16

Maximum Random Access Time

20ns

Timing Type

Asynchronous

Minimum Supply Voltage

3V

Mount Type

Surface

Maximum Supply Voltage

3.6V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Pin Count

48

Length

18.41mm

Series

IDT71V016

Height

1mm

Standards/Approvals

No

Automotive Standard

No

Supply Current

170mA

COO (Country of Origin):
TW
The Renesas Electronics high-speed static RAM organized as 64K x 16. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.

Low power consumption via chip deselect

Equal access and cycle times

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