Renesas Electronics SRAM, 71024S20TYG8- 1 MB
- RS庫存編號:
- 264-1294
- 製造零件編號:
- 71024S20TYG8
- 製造商:
- Renesas Electronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD240.00
(不含稅)
TWD252.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 912 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | TWD120.00 | TWD240.00 |
| 50 - 98 | TWD106.50 | TWD213.00 |
| 100 - 248 | TWD104.50 | TWD209.00 |
| 250 - 498 | TWD102.50 | TWD205.00 |
| 500 + | TWD101.50 | TWD203.00 |
* 參考價格
- RS庫存編號:
- 264-1294
- 製造零件編號:
- 71024S20TYG8
- 製造商:
- Renesas Electronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Renesas Electronics | |
| Product Type | SRAM | |
| Memory Size | 1MB | |
| Organisation | 128k x 8 | |
| Number of Words | 128k | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 20ns | |
| Timing Type | Asynchronous | |
| Minimum Supply Voltage | 4.5V | |
| Maximum Supply Voltage | 5.5V | |
| Mount Type | Surface | |
| Package Type | SOJ | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 32 | |
| Maximum Operating Temperature | 70°C | |
| Length | 21.95mm | |
| Series | 71024S | |
| Standards/Approvals | No | |
| Height | 2.67mm | |
| Width | 7.6 mm | |
| Automotive Standard | No | |
| Supply Current | 160mA | |
| 選取全部 | ||
|---|---|---|
品牌 Renesas Electronics | ||
Product Type SRAM | ||
Memory Size 1MB | ||
Organisation 128k x 8 | ||
Number of Words 128k | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 20ns | ||
Timing Type Asynchronous | ||
Minimum Supply Voltage 4.5V | ||
Maximum Supply Voltage 5.5V | ||
Mount Type Surface | ||
Package Type SOJ | ||
Minimum Operating Temperature -55°C | ||
Pin Count 32 | ||
Maximum Operating Temperature 70°C | ||
Length 21.95mm | ||
Series 71024S | ||
Standards/Approvals No | ||
Height 2.67mm | ||
Width 7.6 mm | ||
Automotive Standard No | ||
Supply Current 160mA | ||
- COO (Country of Origin):
- TW
The Renesas Electronics high-speed static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.
Low power consumption via chip deselect
Available in 300 and 400 mil plastic SOJ
Equal access and cycle times
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