Alliance Memory SRAM- 1 MB
- RS庫存編號:
- 230-8445
- 製造零件編號:
- AS6C1008-55PIN
- 製造商:
- Alliance Memory
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 13 件）*
TWD2,359.50
(不含稅)
TWD2,477.54
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 26 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 13 - 13 | TWD181.50 | TWD2,359.50 |
| 26 - 39 | TWD174.30 | TWD2,265.90 |
| 52 - 91 | TWD169.00 | TWD2,197.00 |
| 104 - 247 | TWD164.00 | TWD2,132.00 |
| 260 + | TWD159.20 | TWD2,069.60 |
* 參考價格
- RS庫存編號:
- 230-8445
- 製造零件編號:
- AS6C1008-55PIN
- 製造商:
- Alliance Memory
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Alliance Memory | |
| Product Type | SRAM | |
| Memory Size | 1MB | |
| Organisation | 128K x 8 bit | |
| Number of Words | 128k | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 55ns | |
| Address Bus Width | 17bit | |
| Timing Type | Asynchronous | |
| Minimum Supply Voltage | 2.7V | |
| Maximum Supply Voltage | 5.5V | |
| Mount Type | Through Hole | |
| Minimum Operating Temperature | -40°C | |
| Package Type | DIP | |
| Pin Count | 32 | |
| Maximum Operating Temperature | 85°C | |
| Length | 41.91mm | |
| Series | AS6C1008 | |
| Standards/Approvals | No | |
| Width | 13.82 mm | |
| Height | 3.81mm | |
| Supply Current | 10mA | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Alliance Memory | ||
Product Type SRAM | ||
Memory Size 1MB | ||
Organisation 128K x 8 bit | ||
Number of Words 128k | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 55ns | ||
Address Bus Width 17bit | ||
Timing Type Asynchronous | ||
Minimum Supply Voltage 2.7V | ||
Maximum Supply Voltage 5.5V | ||
Mount Type Through Hole | ||
Minimum Operating Temperature -40°C | ||
Package Type DIP | ||
Pin Count 32 | ||
Maximum Operating Temperature 85°C | ||
Length 41.91mm | ||
Series AS6C1008 | ||
Standards/Approvals No | ||
Width 13.82 mm | ||
Height 3.81mm | ||
Supply Current 10mA | ||
Automotive Standard No | ||
The Alliance Memory AS6C1008 is a 1,048,57 6-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMO S technology. Its standby current is stable within the range of operating temperature.
Fully static operation
Tri-state output