Infineon SRAM, CY7C1021D-10VXI- 1 MB
- RS庫存編號:
- 194-8911
- 製造零件編號:
- CY7C1021D-10VXI
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 17 件）*
TWD1,691.50
(不含稅)
TWD1,776.16
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每管* |
|---|---|---|
| 17 - 68 | TWD99.50 | TWD1,691.50 |
| 85 + | TWD96.50 | TWD1,640.50 |
* 參考價格
- RS庫存編號:
- 194-8911
- 製造零件編號:
- CY7C1021D-10VXI
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | SRAM | |
| Memory Size | 1MB | |
| Organisation | 64K x 16 bit | |
| Number of Words | 64K | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 10ns | |
| Timing Type | Asynchronous | |
| Minimum Supply Voltage | 5V | |
| Mount Type | Through Hole | |
| Maximum Supply Voltage | 3.6V | |
| Package Type | SOJ | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 44 | |
| Width | 10.29 mm | |
| Height | 3.05mm | |
| Standards/Approvals | RoHS | |
| Length | 28.7mm | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type SRAM | ||
Memory Size 1MB | ||
Organisation 64K x 16 bit | ||
Number of Words 64K | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 10ns | ||
Timing Type Asynchronous | ||
Minimum Supply Voltage 5V | ||
Mount Type Through Hole | ||
Maximum Supply Voltage 3.6V | ||
Package Type SOJ | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Pin Count 44 | ||
Width 10.29 mm | ||
Height 3.05mm | ||
Standards/Approvals RoHS | ||
Length 28.7mm | ||
This device has an automatic power down feature that significantly reduces power consumption when deselected. The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15). Read from the device by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7.