CY7C1049GN is a high-performance CMOS fast static RAM device organized as 512K words by 8-bits. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0 through I/O7 and address on A0 through A18 pins. Data reads are performed by asserting the Chip Enable (CE) and Output Enable (OE) inputs LOW and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O7). All I/Os (I/O0 through I/O7) are placed in a high-impedance state during the following events: The device is deselected (CE HIGH) The control signal OE is de-asserted.

High speed
tAA = 10 ns
Low active and standby currents
Active current: ICC = 38 mA typical
Standby current: ISB2 = 6 mA typical
Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and
4.5 V to 5.5 V
1.0 V data retention
TTL-compatible inputs and outputs
Pb-free 36-pin SOJ and 44-pin TSOP II packages

單位	每單位	每包*
2 - 4	TWD140.00	TWD280.00
6 - 8	TWD136.50	TWD273.00
10 +	TWD128.00	TWD256.00

選取全部	屬性	值
	品牌	Infineon
	Memory Size	4Mbit
	Organisation	512k x 8
	Number of Words	512k
	Number of Bits per Word	8bit
	Maximum Random Access Time	10ns

	選取全部
	品牌 Infineon
	Memory Size 4Mbit
	Organisation 512k x 8
	Number of Words 512k
	Number of Bits per Word 8bit
	Maximum Random Access Time 10ns

Infineon SRAM Memory Chip, CY7C1049GN-10VXI- 4Mbit

訂單超過 $1,300.00 免費送貨

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