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- RS庫存編號:
- 391-713P
- 製造零件編號:
- IS61C256AL-12TLI
- 製造商:
- ISSI
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ISSI | |
| Memory Size | 256kbit | |
| Organisation | 32K words x 8 bit | |
| Number of Words | 32k | |
| Number of Bits per Word | 8bit | |
| Maximum Random Access Time | 12ns | |
| Address Bus Width | 15bit | |
| Low Power | Yes | |
| Timing Type | Asynchronous | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 28 | |
| Dimensions | 8.1 x 11.9 x 1mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Height | 1mm | |
| Minimum Operating Supply Voltage | 4.5 V | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +85 °C | |
| Length | 8.1mm | |
| Width | 11.9mm | |
| 選取全部 | ||
|---|---|---|
品牌 ISSI | ||
Memory Size 256kbit | ||
Organisation 32K words x 8 bit | ||
Number of Words 32k | ||
Number of Bits per Word 8bit | ||
Maximum Random Access Time 12ns | ||
Address Bus Width 15bit | ||
Low Power Yes | ||
Timing Type Asynchronous | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 28 | ||
Dimensions 8.1 x 11.9 x 1mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Height 1mm | ||
Minimum Operating Supply Voltage 4.5 V | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +85 °C | ||
Length 8.1mm | ||
Width 11.9mm | ||
Static RAM, ISSI
The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asynchronous SRAM, 5V low power types asynchronous SRAMs, ultra-low power CMOS Static RAM and PowerSaverTM lower power asynchronous SRAMs. The ISSI SRAM devices come in a variety of voltages, memory size and different organisations. They are suitable in applications such as CPU cache memory, embedded processors, hard drive, and switches to industrial electronics.
Power supply: 1.8V/3.3V/5V
Packages available: BGA, SOJ, SOP, sTSOP, TSOP
Configuration choice available: x8 and x16
ECC feature available for High Speed Asynchronous SRAMs