Broadcom ASSR-4118 Series Solid State Relay, 0.1 A Load, Surface Mount, 400 V Load, 0.8V Control
- RS庫存編號:
- 693-6914P
- 製造零件編號:
- ASSR-4118-003E
- 製造商:
- Broadcom
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計 10 件 (以管提供)*
TWD760.00
(不含稅)
TWD798.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,390 件從 2026年6月01日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 10 - 49 | TWD76.00 |
| 50 - 99 | TWD74.00 |
| 100 - 249 | TWD72.00 |
| 250 + | TWD70.00 |
* 參考價格
- RS庫存編號:
- 693-6914P
- 製造零件編號:
- ASSR-4118-003E
- 製造商:
- Broadcom
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Broadcom | |
| Product Type | Solid State Relay | |
| Maximum Load Current | 0.1A | |
| Mount Type | Surface | |
| Maximum Load Voltage | 400V | |
| Minimum Load Voltage | -400V | |
| Maximum Control Voltage | 0.8V | |
| Minimum Control Voltage | 1.1V | |
| Series | ASSR-4118 | |
| Terminal Type | 4-Pin | |
| Contact Configuration | SPST | |
| Minimum Operating Temperature | -40°C | |
| On State Resistance | 8Ω | |
| Maximum Operating Temperature | 85°C | |
| Width | 4.4mm | |
| Standards/Approvals | UL, IEC, CSA, RoHS | |
| Length | 4.3mm | |
| Height | 2mm | |
| Output Type | MOSFET | |
| Off State Leakage Current | 1μA | |
| Capacitance | 0.4pF | |
| 選取全部 | ||
|---|---|---|
品牌 Broadcom | ||
Product Type Solid State Relay | ||
Maximum Load Current 0.1A | ||
Mount Type Surface | ||
Maximum Load Voltage 400V | ||
Minimum Load Voltage -400V | ||
Maximum Control Voltage 0.8V | ||
Minimum Control Voltage 1.1V | ||
Series ASSR-4118 | ||
Terminal Type 4-Pin | ||
Contact Configuration SPST | ||
Minimum Operating Temperature -40°C | ||
On State Resistance 8Ω | ||
Maximum Operating Temperature 85°C | ||
Width 4.4mm | ||
Standards/Approvals UL, IEC, CSA, RoHS | ||
Length 4.3mm | ||
Height 2mm | ||
Output Type MOSFET | ||
Off State Leakage Current 1μA | ||
Capacitance 0.4pF | ||
Solid State Relay (Photo MOSFET), ASSR Series, Avago Technologies
The Avago Technologies’ Photo MOSFET Solid State Relay family consists of an infrared light-emitting diode (LED) and the detector which consists of a high-speed photovoltaic diode array and driver circuitry to switch on/off two discrete high voltage MOSFETs.