Infineon SDRAM 64 MB Surface, 24-Pin 8 bit FBGA-24 Ball
- RS庫存編號:
- 273-7513
- 製造零件編號:
- S27KL0642DPBHI020
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 件)*
TWD104.00
(不含稅)
TWD109.20
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD104.00 |
| 10 - 24 | TWD102.00 |
| 25 - 49 | TWD100.00 |
| 50 - 99 | TWD98.00 |
| 100 + | TWD96.00 |
* 參考價格
- RS庫存編號:
- 273-7513
- 製造零件編號:
- S27KL0642DPBHI020
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 64MB | |
| Product Type | SDRAM | |
| Data Bus Width | 8bit | |
| Number of Bits per Word | 16 | |
| Maximum Clock Frequency | 200MHz | |
| Mount Type | Surface | |
| Package Type | FBGA-24 Ball | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 24 | |
| Maximum Operating Temperature | 105°C | |
| Length | 6mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Series | S27K | |
| Width | 8 mm | |
| Automotive Standard | AEC-Q100 Grade 2 & 3 | |
| Minimum Supply Voltage | 1.8V | |
| Supply Current | 360μA | |
| Maximum Supply Voltage | 3.6V | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 64MB | ||
Product Type SDRAM | ||
Data Bus Width 8bit | ||
Number of Bits per Word 16 | ||
Maximum Clock Frequency 200MHz | ||
Mount Type Surface | ||
Package Type FBGA-24 Ball | ||
Minimum Operating Temperature -40°C | ||
Pin Count 24 | ||
Maximum Operating Temperature 105°C | ||
Length 6mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Series S27K | ||
Width 8 mm | ||
Automotive Standard AEC-Q100 Grade 2 & 3 | ||
Minimum Supply Voltage 1.8V | ||
Supply Current 360μA | ||
Maximum Supply Voltage 3.6V | ||
The Infineon DRAM is a high speed CMOS, self refresh DRAM, with HYPERBUS interface. The DRAM array uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by the HYPERBUS interface master. Since the host is not required to manage any refresh operations, the DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Hence, the memory is more accurately described as Pseudo Static RAM.
200 MHz maximum clock rate
Data throughput up to 400 MBps
Bidirectional read write data strobe
Automotive AEC Q100 Grade 2 and 3
Optional DDR centre aligned read strobe
DDR transfers data on both edges of the clock
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