Winbond DDR2 SDRAM 128 MB Surface, 84-Pin 16 bit TFBGA

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小計 55 件 (以盤裝提供)*

TWD5,313.00

(不含稅)

TWD5,578.65

(含稅)

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  • 2026年10月27日 發貨
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單位
每單位
55 - 100TWD96.60
105 +TWD95.20

* 參考價格

包裝方式:
RS庫存編號:
188-2730P
製造零件編號:
W9712G6KB25I
製造商:
Winbond
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品牌

Winbond

Memory Size

128MB

Product Type

DDR2 SDRAM

Data Bus Width

16bit

Address Bus Width

15bit

Number of Bits per Word

8

Maximum Random Access Time

0.4ns

Number of Words

16M

Mount Type

Surface

Package Type

TFBGA

Minimum Operating Temperature

-40°C

Pin Count

84

Maximum Operating Temperature

95°C

Length

12.6mm

Standards/Approvals

RoHS

Series

W9712G6KB

Height

0.8mm

Minimum Supply Voltage

1.7V

Maximum Supply Voltage

1.9V

Automotive Standard

No

Supply Current

135mA

COO (Country of Origin):
TW
The W9712G6KB is a 128M bits DDR2 SDRAM and speed involving -25, 25I and -3.

Double Data Rate architecture: two data transfers per clock cycle

CAS Latency: 3, 4, 5 and 6

Burst Length: 4 and 8

Bi-directional, differential data strobes (DQS and /DQS ) are transmitted / received with data

Edge-aligned with Read data and center-aligned with Write data

DLL aligns DQ and DQS transitions with clock

Differential clock inputs (CLK and /CLK)

Data masks (DM) for write data

Commands entered on each positive CLK edge, data and data mask are referenced to both edges of /DQS

Posted /CAS programmable additive latency supported to make command and data bus efficiency

Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)

Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality

Auto-precharge operation for read and write bursts

Auto Refresh and Self Refresh modes

Precharged Power Down and Active Power Down

Write Data Mask

Write Latency = Read Latency - 1 (WL = RL - 1)

Interface: SSTL_18

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