Intelligent Memory IM2G16D3FDBG-125I SDRAM 2 GB Surface, 96-Pin 16 bit FBGA-96 Ball
- RS庫存編號:
- 588-635
- 製造零件編號:
- IM2G16D3FDBG-125I
- 製造商:
- Intelligent Memory
小計（1 包，共 2 件）*
TWD665.00
(不含稅)
TWD698.24
(含稅)
添加 4 件 件可免費送貨
有庫存
- 加上 20 件從 2026年2月23日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 + | TWD332.50 | TWD665.00 |
* 參考價格
- RS庫存編號:
- 588-635
- 製造零件編號:
- IM2G16D3FDBG-125I
- 製造商:
- Intelligent Memory
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Intelligent Memory | |
| Memory Size | 2GB | |
| Product Type | SDRAM | |
| Organisation | 16M x 16 | |
| Data Bus Width | 16bit | |
| Number of Bits per Word | 16 | |
| Maximum Clock Frequency | 933MHz | |
| Maximum Random Access Time | 13.5ns | |
| Number of Words | 16 | |
| Mount Type | Surface | |
| Package Type | FBGA-96 Ball | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 96 | |
| Maximum Operating Temperature | 95°C | |
| Width | 7.5 mm | |
| Length | 13mm | |
| Height | 1.2mm | |
| Standards/Approvals | RoHS | |
| Maximum Supply Voltage | 1.45V | |
| Minimum Supply Voltage | 1.283V | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Intelligent Memory | ||
Memory Size 2GB | ||
Product Type SDRAM | ||
Organisation 16M x 16 | ||
Data Bus Width 16bit | ||
Number of Bits per Word 16 | ||
Maximum Clock Frequency 933MHz | ||
Maximum Random Access Time 13.5ns | ||
Number of Words 16 | ||
Mount Type Surface | ||
Package Type FBGA-96 Ball | ||
Minimum Operating Temperature -40°C | ||
Pin Count 96 | ||
Maximum Operating Temperature 95°C | ||
Width 7.5 mm | ||
Length 13mm | ||
Height 1.2mm | ||
Standards/Approvals RoHS | ||
Maximum Supply Voltage 1.45V | ||
Minimum Supply Voltage 1.283V | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling
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