Vishay 100 V 10 A Diode Schottky 3-Pin TO-277
- RS庫存編號:
- 919-0764
- 製造零件編號:
- V10P10-M3/86A
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1500 件）*
TWD16,200.00
(不含稅)
TWD17,010.00
(含稅)
訂單超過 $1,300.00 免費送貨
正在逐步停售
- 最終 1,500 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 1500 - 1500 | TWD10.80 | TWD16,200.00 |
| 3000 - 13500 | TWD10.50 | TWD15,750.00 |
| 15000 + | TWD10.30 | TWD15,450.00 |
* 參考價格
- RS庫存編號:
- 919-0764
- 製造零件編號:
- V10P10-M3/86A
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-277 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 100V | |
| Series | V10 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 150μA | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 180A | |
| Maximum Forward Voltage Vf | 620mV | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Length | 4.35mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-277 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 100V | ||
Series V10 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 150μA | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 180A | ||
Maximum Forward Voltage Vf 620mV | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Length 4.35mm | ||
Automotive Standard AEC-Q101 | ||
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Schottky Rectifiers, Vishay Semiconductor
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